Substrates:

Material, K value Standard X, Y(inches) Standard thickness(mils) Available thickness(mil)
Aluminum Nitride, 9.0 2 x 2 5, 10, 15, 25, 40 5-50
Alumina, 9.9 2 x 2 5, 10, 15, 20 5-25
Quartz, 3.8 2 inch round 10 5-25
X7R B, 1200 1 x 1 5, 10 4-25
X7R X, 2700 1 x 1 5, 10 4-25
X7R T, 4000 1 x 1 7, 10 4-25
GBBL A, 20,000 1.4 x 1.4 7, 10 5-15
GBBL A, 60,000 1.4 x 1.4 7, 10 5-15
NOTE: On Alumina and Aluminum Nitride, typical surface is as-fired condition, polish to 2 µ-inch is available

Metal Films:

Metal Deposition Method Thickness(Angstroms) Typical Use
Titanium(Ti) Sputter Deposition 200-1,000 Barrier, Adhesion
Titanium Nitride(TiN) Reactive Sputter Dep 200-1,000 Barrier, Adhesion
Titanium Tungsten(TiW) Sputter Deposition 200-2,000 Barrier, Adhesion
TiW Nitride(TiWN) Reactive Sputter Dep 200-2,000 Barrier, Adhesion
Nickel(Ni) Sputter Deposition 200-2,000 Barrier for solder die attach
Nickel(Ni) Plating 5,000-25,000 Barrier for solder die attach
Gold(Au) Sputter Deposition 1,000-10,000 Die attach, Wirebond
Gold(Au) Plating 5,000-75,000 Die attach, Wirebond
Gold/Tin(AuSn-80/20) NA 5,000-50,000 Eutectic High Reliability solder
Copper(Cu) Sputter Deposition 1,000-20,000 Conductor
Tantalum(Ta) Sputter Deposition 200-5,000 Barrier, Adhesion
Tantalum Nitride(TaN) Reactive Sputter Dep 500-5,000 Resistor(Typical 1000A, 50Ω/□)
Others available upon request

Feature Dimensions:

Feature Available Min. Width(µm)*
Conductor Line 25
Space 25
Line/Space Tolerance 5
Laser drilled holes 75
Plated Vias 75
2nd layer alignment +/- 7
50Ω/□ Resistor 25
AuSn(80/20) Blanket
AuSn(80/20) 75
*-> μm = microns = 10-6m 25.4μm=1 mil

 

Substrate Code Chart

Substrate Material MKaterial Code K Temperature Coefficient Operating Temperature Dissipation Factor
ALN *F8.8170 W/M deg K (Th. Cond.)-55 to +125 deg. C 
Alumina *G9.9P120 +/- 30 ppm / deg C-55 to +125 deg. C 
Titanate BasedC230 +/- 30 ppm / deg C-55 to +125 deg. C< 0.15% @ 1 MHz
Titanate Based K 370 +/- 30 ppm / deg C-55 to +125 deg. C< 0.15% @ 1 MHz
Titanate Based N 800 +/- 30 ppm / deg C-55 to +125 deg. C< 0.15% @ 1 MHz
Titanate Based U 120 -750 +/- 120 ppm / deg C-55 to +125 deg. C < 0.25% @ 1 MHz
Titanate Based V 160 -1500 +/- 300 ppm / deg C-55 to +125 deg. C < 0.25% @ 1 MHz
Titanate Based R 280 -750 +/- 120 ppm / deg C-55 to +125 deg. C < 0.25% @ 1 MHz
Titanate Based L 350 -750 +/- 120 ppm / deg C-55 to +125 deg. C < 150% @ 1 MHz
Titanate Based D 600 +/- 10% (-55 to +125 C)-55 to +125 deg. C < 2.50% @ 1 MHz
Titanate Based B 1200+/- 10% (-55 to +125 C)-55 to +125 deg. C < 2.50% @ 1 MHz
Titanate Based W 2000+/- 10% (-55 to +125 C)-55 to +125 deg. C < 2.50% @ 1 MHz
Titanate Based X 2700 +/- 15% (-55 to +125 C)-55 to +125 deg. C < 2.50% @ 1 MHz
Titanate Based T 4000 +/- 15% (-55 to +125 C)-55 to +125 deg. C < 2.50% @ 1 MHz
Titanate Based Z 8000 +22 / -56% (+10 to +85 C)-55 to +125 deg. C < 4.00% @ 1 MHz
Titanate Based Y 12000 +22 / -82% (-30 to +85 C)-55 to +125 deg. C < 4.00% @ 1 MHz